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Mathematics and Mechanics of Solids
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Dislocation—Obstacle Interactions at Atomic Level in Irradiated Metals

David J. Bacon

Department of Engineering, The University of Liverpool, Brownlow Hill, Liverpool L69 3GH, UK

Yuri N. Osetsky

Computer Sciences and Mathematics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6138, USA

Nano-scale defect clusters, such as voids, dislocation loops, stacking-fault tetrahedra and irradiation-induced precipitates, are produced in metals by irradiation with high-energy atomic particles. They are obstacles to dislocation glide and can give rise to substantial changes in the yield and flow stresses and ductility. Atomic-scale computer simulation is able to provide detail of how these effects are influenced by obstacle structure, applied stress, strain rate and temperature. Some recent results from modelling dislocations interacting with obstacles are described. Emphasis is placed on dislocation interaction with voids, copper precipitates and dislocation loops in the BCC metal iron and stacking fault tetrahedra in FCC copper. In the latter case, the importance of surfaces in reactions in TEM foils is highlighted. It is shown that while some atomic processes can be represented adequately by the continuum theory of crystal defects, others cannot.

Key Words: Dislocations • radiation damage • computer simulation • dislocation obstacles • atomic-scale

Mathematics and Mechanics of Solids, Vol. 14, No. 1-2, 270-283 (2009)
DOI: 10.1177/1081286508092615
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